A Compact Model of Gate-Voltage-Dependent Quantum Effects in Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

被引：0

作者：

Kim, Jihyun ^{[1
]}

Sun, Wookyung ^{[1
]}

Park, Seunghye ^{[1
]}

Lim, Hyein ^{[1
]}

Shin, Hyungsoon ^{[1
]}

机构：

[1] Ewha Womans Univ, Dept Elect Engn, Seoul 120750, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2011年 / 11卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

MOSFET; gate voltage; quantum effect; short channel; surrounding gate; Poisson; THRESHOLD VOLTAGE; MOSFETS;

D O I：

10.5573/JSTS.2011.11.4.278

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths (L-g) and radii (R). Schrodinger's equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.

引用

页码：278 / 286

页数：9

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