Effect of doping-induced defect concentration on the characteristics of Si-quantum-dot solar cells

被引：0
作者：
Shin, Dong Hee [1 ]
Hong, Seung Hui [1 ]
Kim, Chang Oh [1 ]
Choi, Suk-Ho [1 ]
Kim, Kyung Joong [2 ]
机构：
[1] Kyung Hee Univ, Dept Appl Phys, Coll Appl Sci, Yongin 446701, South Korea
[2] Ctr Metrol Nano Sci, Res Inst Stand & Sci, Daejeon, South Korea
来源：
2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2010年
关键词：
SILICON NANOCRYSTALS; PHOTOLUMINESCENCE; NANOSTRUCTURES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：144 / 146
页数：3
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