Electrodeposition of amorphous silicon in non-oxygenated organic solvent

被引:37
作者
Bechelany, Mikhael [1 ,2 ]
Elias, Jamil [2 ]
Brodard, Pierre [2 ]
Michler, Johann [2 ]
Philippe, Laetitia [2 ]
机构
[1] Univ Montpellier 2, Inst Europeen Membranes, CNRS, UMR 5635, F-34095 Montpellier, France
[2] EMPA, Swiss Fed Labs Mat Sci & Technol, Mech Micromat & Nanostruct, CH-3602 Thun, Switzerland
关键词
Silicon; Electrodeposition; Organic solvent; Annealing; Raman spectroscopy; ELECTROCHEMICAL REDUCTION; RAMAN-SPECTRA; IONIC LIQUID; ROOM-TEMPERATURE; DICHLOROMETHANE; NANOWIRES; GROWTH;
D O I
10.1016/j.tsf.2011.09.026
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the synthesis of amorphous silicon using electrodeposition in two non-oxygenated organic solvents, acetonitril and dichloromethane, under controlled atmosphere. In both solvents, tetraethylammonium chloride has been used as a supporting electrolyte and silicon tetrachloride as a silicon precursor. The porosity and the morphology of the electrodeposited silicon layers have been studied as a function of depositing parameters (solvent, voltage, etc.). We will show the formation from dense to highly porous Si deposits as a function of solvent and experimental parameters. To increase the stability of the deposits before exposure to air, a heat treatment under hydrogen has been performed. The chemical and structural characterizations of the deposit by scanning electron microscopy, energy dispersive X-ray spectroscopy and Raman spectroscopy show the formation of pure amorphous silicon. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:1895 / 1901
页数:7
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