Fabrication of sub-50-nm-gate i-AlGaN/GaN HEMTs on sapphire

被引：35

作者：

Endoh, A ^{[1
]}

Yamashita, Y ^{[1
]}

Ikeda, K ^{[1
]}

Higashiwaki, M ^{[1
]}

Hikosaka, K ^{[1
]}

Matsui, T ^{[1
]}

Hiyamizu, S ^{[1
]}

Mimura, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303335

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We fabricated sub-50-nm-gate i-AlGaN/GaN high electron mobility transistors (HEMTs) on sapphire and measured their DC and RF characteristics at room temperature. The fabricated HEMTs exhibited true device operation and good pinch-off characteristics down to a gate length L-g of 25 nm. For the HEMTs with a source-drain spacing L-sd of 2 mum, we obtained the Lg dependence of the cutoff frequency f(T) under a drain-source voltage V-ds of 3 V. The peak f(T) was measured to be 102 GHz at L-g = 35 nm. At L-g = 25 nm, f(T) started to decrease due to the short-channel effect. The highest fT of 110 GHz was obtained by reducing L-sd from 2 to 1.5 mum and by increasing V-ds from 3 to 4 V. (C) 2003 WILEY-VCH Vertag GmbH & Co. KGaA, Weinheim.

引用

页码：2368 / 2371

页数：4