Ferromagnetism in Ti-doped ZnO thin films

被引：27

作者：

Shao, Q. ^{[1
,2
]}

Wang, C. ^{[1
,2
]}

Zapien, J. A. ^{[1
,2
,3
]}

Leung, C. W. ^{[4
,5
]}

Ruotolo, A. ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Ctr Funct Photon, Kowloon, Hong Kong, Peoples R China

[3] City Univ Hong Kong, Ctr Super Diamond & Adv Films COSDAF, Kowloon, Hong Kong, Peoples R China

[4] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

[5] Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 17期

基金：

美国国家科学基金会;

关键词：

LUMINESCENCE; TEMPERATURE; STATES;

D O I：

10.1063/1.4917514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report our study on the origin of ferromagnetism in Ti-doped ZnO. A series of Ti doped ZnO films with increasing concentration of Ti dopant were grown and characterized in terms of structural, electrical, and magnetic properties. We found that Ti has a low solubility in the ZnO wurtzite structure. This favors stabilization of a large number of Zn vacancies, and theoretical calculations have shown that they can carry substantial magnetic moment. A carrier mediated exchange interaction between Zn vacancies is at the origin of the surprisingly high magnetic moment we measure in this compound. (C) 2015 AIP Publishing LLC.

引用

页数：4

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