Preparation and luminescence properties of Eu3+ ion and Ga3+ ion co-doped SiO2 materials

Ga3+ and Eu3+ co-doped SiO2 materials were prepared by sol-gel method and the structure of materials were investigated by IR and XRD techniques. The results indicate that the materials are in amorphous phase and the SiO2 net structure is still observed in samples annealed at 800 degrees C. The sample showed the characteristic emission of Eu3+ at 576 nm (D-5(0)-F-7(0)), 588 nm (D-5(0)-F-7(1)), 612 nm (D-5(0)-F-7(2)) when excited by 393 nm. And it is found that emission from D-5(0)-F-7(1) quenches with high temperature. The SiO2 materials doped with Ga3+ radiate blue fluorescence at 460 rim. Ga3+ and Eu3+ co-doped SiO2 materials can radiate blue and red fluorescence. Phosphor can be made to radiate different color fluorescence by varying excitation wavelength. Doping Ga3+ or Eu3+ has less influence on the emission wavelength of SiO2 materials, but has a great effect on the emission intensity.