Calibrated hydrodynamic simulation of deeply-scaled well-tempered nanowire field effect transistors

被引：5

作者：

Nayfeh, O. M. ^{[1
]}

Antoniadis, D. A. ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Dept Elect Engn, Cambridge, MA 02139 USA

来源：

SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007 | 2007年

关键词：

D O I：

10.1007/978-3-211-72861-1_73

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we first extract Hydrodynamic (HD) parameters from a computationally intensive full-band Monte Carlo (MC) solution via the MOCA simulator. We are then able to achieve good fits between the calibrated HD and MC velocity profile of a near ballistic double gated FET (DGFET). Moreover, we demonstrate good fits using bulk-Si HID parameters between the IN characteristics of HD simulation and the measured data of deeply scaled Silicon nanowire field effect transistors (SNWFETs).

引用

页码：305 / 308

页数：4

共 7 条

[1] Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors [J].

Duncan, A ;

Ravaioli, U ;

Jakumeit, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) :867-876

[2] On the electron mobility in ultrathin SOI and GOI [J].

Khakifirooz, A ;

Antoniadis, DA .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (02) :80-82

[3] TRANSPORT-COEFFICIENTS FOR A SILICON HYDRODYNAMIC MODEL EXTRACTED FROM INHOMOGENEOUS MONTE-CARLO CALCULATIONS [J].

LEE, SC ;

TANG, TW .

SOLID-STATE ELECTRONICS, 1992, 35 (04) :561-569

[4]

Nayfeh OM, 2004, SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2004, P117

[5]

RAVISHANKAR R, 2005, J COMPUT ELECTRON, V4, P39

[6]

Rhew J.-H., 2002, J COMPUT ELECTRON, V1, P385

[7]

YEO KH, 2006, INT EL DEV M

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