Thermoelectric hydrogen sensor working at room temperature prepared by bismuth-telluride P-N couples and Pt/γ-Al2O3

被引：29

作者：

Huang, Hu ^{[1
]}

Luan, Weiling ^{[1
]}

Zhang, Jian-Song ^{[1
]}

Qi, Yun-Shi ^{[1
]}

Tu, Shan-Tung ^{[1
]}

机构：

[1] E China Univ Sci & Technol, Sch Mech & Power Engn, Shanghai 200237, Peoples R China

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2008年 / 128卷 / 02期

基金：

中国国家自然科学基金;

关键词：

hydrogen sensor; thermoelectric effect; bismuth-telluride;

D O I：

10.1016/j.snb.2007.07.060

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A hydrogen sensor working at room temperature with high sensitivity, good selectivity and simple structure was presented in this paper. Four couples of P- and N-type bismuth-telluride films were connected in series to serve as the feedback part of the hydrogen sensor with a high Seebeck coefficient of 1.1 mV/K. A platinum catalyst was deposited on gamma-Al2O3 acting as a sensitive part. Linear relationships between the output voltage and the hydrogen concentration as well as the flow rate were found when the hydrogen concentration was higher than 0.5 vol.%. As for the 3 vol.% H-2/Air gas with a 100 ml/min flow rate at room temperature, the response and recovery times were about 30 and 55 s, respectively, and the error of repeatability was less than 0.3%. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：581 / 585

页数：5

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