High thermoelectric power in a NaxCoO2 thin film prepared by sputtering with rapid thermal annealing

被引：13

作者：

Lee, Hee Sang ^{[1
]}

Kim, Gil Ho ^{[1
]}

Hwang, Deok Hyun ^{[2
]}

Woo, Seong Ihl ^{[1
,2
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Chem & Biomol Engn, Taejon 305701, South Korea

[2] Korea Adv Inst Sci & Technol, Grad Sch EEWS PLUS BK21, Taejon 305701, South Korea

来源：

CURRENT APPLIED PHYSICS | 2015年 / 15卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

Thin films; Sputtering; Annealing; Deformation; SODIUM;

D O I：

10.1016/j.cap.2014.12.030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

NaxCoO2 thin films were fabricated by means of RF-magnetron sputtering. We measured and analyzed the thermal properties and changes of the NaxCoO(2) crystal structure by XRD, SEM, Raman spectra, and XPS analyses. Sodium ions diffused from the bulk of the thin film to the surface as the temperature increased. The diffused Na ions reacted with oxygen ions and Na2O was formed on the surface of the thin film, resulting in a decrease of the carrier concentration and a change of the crystal structure from a layer to a spinel structure. The Seebeck coefficient of the NaxCoO(2) thin film annealed at 550 degrees C is larger than the value (100 mu V/K) for single crystal NaCo2O4. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：412 / 416

页数：5

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