Enhancing the Open-Circuit Voltage of Perovskite Solar Cells by Embedding Molecular Dipoles within Their Hole-Blocking Layer

被引:33
作者
Butscher, Julian F. [1 ,2 ,3 ,4 ]
Intorp, Sebastian [5 ]
Kress, Joshua [1 ,2 ,3 ,4 ]
An, Qingzhi [1 ,2 ,3 ,4 ]
Hofstetter, Yvonne J. [1 ,2 ,3 ,4 ]
Hippchen, Nikolai [5 ]
Paulus, Fabian [1 ,2 ,3 ,4 ]
Bunz, Uwe H. F. [5 ]
Tessler, Nir [6 ]
Vaynzof, Yana [1 ,2 ,3 ,4 ]
机构
[1] Heidelberg Univ, Kirchhoff Inst Phys, Neuenheimer Feld 227, D-69120 Heidelberg, Germany
[2] Heidelberg Univ, Ctr Adv Mat, Neuenheimer Feld 227, D-69120 Heidelberg, Germany
[3] Tech Univ Dresden, Integrated Ctr Appl Phys & Photon Mat, Nothnitzer Str 61, D-01187 Dresden, Germany
[4] Tech Univ Dresden, Ctr Adv Elect Dresden CFAED, Nothnitzer Str 61, D-01187 Dresden, Germany
[5] Heidelberg Univ, Inst Organ Chem, Neuenheimer Feld 270, D-69120 Heidelberg, Germany
[6] Technion Israel Inst Technol, Dept Elect Engn, Sara & Moshe Zisapel Nanoelect Ctr, IL-32000 Haifa, Israel
基金
欧洲研究理事会; 以色列科学基金会;
关键词
open-circuit voltage; perovskite solar cells; molecular dipoles; device simulation; built-in potential; ELECTRON-TRANSPORT LAYER; HIGH-PERFORMANCE; HIGH-EFFICIENCY; HYSTERESIS; STABILITY; DEGRADATION; MORPHOLOGY; CONTACT;
D O I
10.1021/acsami.9b18757
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Engineering the energetics of perovskite photovoltaic devices through deliberate introduction of dipoles to control the built-in potential of the devices offers an opportunity to enhance their performance without the need to modify the active layer itself. In this work, we demonstrate how the incorporation of molecular dipoles into the bathocuproine (BCP) hole-blocking layer of inverted perovskite solar cells improves the device open-circuit voltage (V-OC) and, consequently, their performance. We explore a series of four thiaazulenic derivatives that exhibit increasing dipole moments and demonstrate that these molecules can be introduced into the solution-processed BCP layer to effectively increase the built-in potential within the device without altering any of the other device layers. As a result, the V-OC of the devices is enhanced by up to 130 mV, with larger dipoles resulting in higher V-OC. To investigate the limitations of this approach, we employ numerical device simulations that demonstrate that the highest dipole derivatives used in this work eliminate all limitations on the V(OC )stemming from the built-in potential of the device.
引用
收藏
页码:3572 / 3579
页数:8
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