Cathodoluminescence and electron field emission of boron-doped a-C:N films

被引：17

作者：

Hsieh, WJ ^{[1
]}

Lai, SH ^{[1
]}

Chan, LH ^{[1
]}

Chang, KL ^{[1
]}

Shih, HC ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

CARBON | 2005年 / 43卷 / 04期

关键词：

atomic force microscopy; luminescence; electrical properties; optical properties; field emission;

D O I：

10.1016/j.carbon.2004.11.013

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The optical and electrical properties of so-called carbon nitride films (a-C:N) and boron doped so-called carbon nitride films (a-C:N:B) are studied with cathodoluminescence (CL) spectroscopy and electron field emission measurement. The a-C:N films were first deposited on Si by a filtered cathodic arc plasma system, and then boron ions (similar to1 x 10(16) cm(-2)) were implanted into the a-C:N films to form a-C:N:B films by a medium current implanter. The structural and morphological properties of a-C:N and a-C:N:B films were then analyzed using secondary ion mass spectrometer, X-ray photoelectron spectroscopy, FT-IR spectra, Raman spectroscopy and atomic force microscopy. The a-C:N film exhibits luminescence of blue light (similar to2.67 eV) and red light (similar to1.91 eV), and the a-C:N:B film displays luminescence of blue light (similar to2.67 eV) in CL spectra measured at 300 K. Furthermore, the incorporated boron atoms change the electron field emission property, which shows a higher turn on field for the a-C:N:B film (3.6 V/mum) than that for the a-C:N film (2.8 V/mum). (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：820 / 826

页数：7

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