Hydrogen-mediated spin-spin interaction in ZnCoO

被引:136
作者
Park, CH
Chadi, DJ
机构
[1] Pusan Natl Univ, Res Ctr Dielect & Adv Matter Phys, Pusan 609735, South Korea
[2] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
[3] NEC Labs Amer, Princeton, NJ 08540 USA
关键词
D O I
10.1103/PhysRevLett.94.127204
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The effect of hydrogen impurities on the electronic and magnetic properties of ZnO-based diluted magnetic semiconductors is examined through first-principles pseudopotential calculations. We suggest that interstitial H can mediate a strong short-ranged ferromagnetic spin-spin interaction between neighboring magnetic impurities through the formation of a bridge bond. Results based on first-principles total-energy calculations and Monte Carlo simulations indicate that such H-mediated spin-spin interactions can lead to high temperature ferromagnetism.
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页数:4
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