Photoluminescence of pseudomorphic SiGe formed by 74Ge+ ion implantation in the overlayer of silicon-on-insulator material

被引：8
作者：
Patel, CJ [1 ]
Zhao, QX
Nur, O
Willander, M
机构：
[1] Chalmers Univ Technol, Dept Microelect & Nano Sci Phys Elect & Photon, S-41296 Gothenburg, Sweden
[2] Univ Goteborg, S-41296 Gothenburg, Sweden
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 23期
关键词：
D O I：
10.1063/1.121536
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A metastable SiGe-on-insulator structure is realized by a high-dose Ge-74(+) ion implantation in the overlayer of silicon-on-insulator followed by solid phase epitaxial regrowth. Studies of the optical properties of the germanium-implanted and post-implantation annealed layers with 18% peak germanium concentration were carried out using photoluminescence (PL) spectroscopy. The electrical integrity of the strained layer was qualitatively inferred from the pseudo-mosfet characterization technique. The PL results show that the broadband (BB) emission related to,germanium implantation damage can be completely eliminated by post-implantation thermal treatment. PL spectra and measured transconductance of the sample heat-treated at 500 degrees C indicate conclusively that a defect-free strained Sice layer has been formed. However, samples heat-treated at higher temperatures show degradation in the charge carrier lifetime, a new BE emission with 0.816 eV peak energy and an emergence of defect related emission at 0.870 eV for samples annealed at and above 900 degrees C. (C) 1998 American Institute of Physics. [S0003-6951(98)04623-3].
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页码：3047 / 3049
页数：3
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