Strain-compensated quantum cascade lasers operating at room temperature

被引：3
作者：
Liu, FQ
Ding, D
Xu, B
Zhang, YZ
Zhang, QS
Wang, ZG
Jiang, DS
Sun, BQ
机构：
[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 220卷 / 04期
关键词：
quantum cascade laser; strain-compensation; molecular beam epitaxy;
D O I：
10.1016/S0022-0248(00)00890-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP substrate using molecular beam epitaxy is reported. The epitaxial quality is demonstrated by the abundant narrow satellite peaks of double-crystal X-ray diffraction and cross-section transmission electron microscopy of the QC laser wafer. Laser action in quasi-continuous wave operation is achieved at lambda approximate to 3.6-3.7 mum at room temperature (34 degreesC) for 20 mum x 1.6 mm devices, with peak output powers of similar to 10.6mW and threshold current density of 2.7kA/cm(2) at this temperature. (C) 2000 Published by Elsevier Science B.V.
引用
收藏
页码：439 / 443
页数：5
相关论文
共 11 条
[1]   HIGH-QUALITY IN0.52AL0.48AS GROWN BY MODULATED ARSENIC MOLECULAR-BEAM EPITAXY [J].
CHOU, ST ;
CHENG, KY .
APPLIED PHYSICS LETTERS, 1993, 63 (20) :2815-2817
[2]   QUANTUM CASCADE LASER [J].
FAIST, J ;
CAPASSO, F ;
SIVCO, DL ;
SIRTORI, C ;
HUTCHINSON, AL ;
CHO, AY .
SCIENCE, 1994, 264 (5158) :553-556
[3]   High power mid-infrared quantum cascade lasers with a molecular beam epitaxy grown InP cladding operating above room temperature [J].
Faist, J ;
Capasso, F ;
Sirtori, C ;
Sivco, DL ;
Baillargeon, JN ;
Hutchinson, AL ;
Chu, SNG ;
Cho, AY .
JOURNAL OF CRYSTAL GROWTH, 1997, 175 :22-28
[4]   Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs [J].
Faist, J ;
Capasso, F ;
Sivco, DL ;
Hutchinson, AL ;
Chu, SNG ;
Cho, AY .
APPLIED PHYSICS LETTERS, 1998, 72 (06) :680-682
[5]   Demonstration of high-performance 10.16 μm quantum cascade distributed feedback lasers fabricated without epitaxial regrowth [J].
Hofstetter, D ;
Faist, J ;
Beck, M ;
Müller, A ;
Oesterle, U .
APPLIED PHYSICS LETTERS, 1999, 75 (05) :665-667
[6]   Improved temperature performance of Al0.33Ga0.67As/GaAs quantum-cascade lasers with emission wavelength at λ≈11 μm [J].
Kruck, P ;
Page, H ;
Sirtori, C ;
Barbieri, S ;
Stellmacher, M ;
Nagle, J .
APPLIED PHYSICS LETTERS, 2000, 76 (23) :3340-3342
[7]   NONPARABOLICITY AND A SUM-RULE ASSOCIATED WITH BOUND-TO-BOUND AND BOUND-TO-CONTINUUM INTERSUBBAND TRANSITIONS IN QUANTUM-WELLS [J].
SIRTORI, C ;
CAPASSO, F ;
FAIST, J ;
SCANDOLO, S .
PHYSICAL REVIEW B, 1994, 50 (12) :8663-8674
[8]   Gas-source molecular beam epitaxy growth of an 8.5 mu m quantum cascade laser [J].
Slivken, S ;
Jelen, C ;
Rybaltowski, A ;
Diaz, J ;
Razeghi, M .
APPLIED PHYSICS LETTERS, 1997, 71 (18) :2593-2595
[9]   GaAs/AlGaAs superlattice quantum cascade lasers at λ≈13 μm [J].
Strasser, G ;
Gianordoli, S ;
Hvozdara, L ;
Schrenk, W ;
Unterrainer, K ;
Gornik, E .
APPLIED PHYSICS LETTERS, 1999, 75 (10) :1345-1347
[10]   Long wavelength superlattice quantum cascade lasers at λ≃17 μm [J].
Tredicucci, A ;
Gmachl, C ;
Capasso, F ;
Sivco, DL ;
Hutchinson, AL ;
Cho, AY .
APPLIED PHYSICS LETTERS, 1999, 74 (05) :638-640
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