OPTICAL-ELECTRICAL PROPERTIES AND CORROSION BEHAVIOR OF TANTALUM-DOPED INDIUM TIN OXIDE FILMS DEPOSITED BY MAGNETRON SPUTTERING

被引:0
|
作者
Dong, Xianping [1 ]
Zhang, Bo [1 ]
Wu, Jiansheng [1 ]
机构
[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China
来源
THERMEC 2009, PTS 1-4 | 2010年 / 638-642卷
关键词
Indium tin oxide; Tantalum; Optical-electrical properties; Corrosion behavior; Environments; LIGHT-EMITTING DIODE; ITO THIN-FILMS; TEMPERATURE;
D O I
10.4028/www.scientific.net/MSF.638-642.2897
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tantalum-doped indium tin oxide films were deposited on glass substrate by co-sputtering with two-targets. Tantalum-doping strengthened the orientation of the (400) plane and resulted in better crystalline structure, larger grain size and lower surface roughness. Due to the better crystallizability of the tantalum-doping films, carrier concentration and the mobility were increased. Tantalum-doping revealed better optical electrical properties. The environmental effects on electrical properties stability and long-term reliability of tantalum-doped films in NaCl, Na(2)SO(4) and HCl solutions at 25 degrees C were also investigated, which simulated corrosion behavior in marine, industrial and acidic environments. The relative resistance change ((Delta)R/R) for tantalum-doped films revealed that the films had the best electrical properties stability and long-term reliability in these aggressive environments. The pre-formation of a protective oxide layer on the surface of the films had an enhancing effect on the corrosion properties.
引用
收藏
页码:2897 / 2902
页数:6
相关论文
共 50 条
  • [1] CHARACTERISTICS OF TITANIUM DOPED INDIUM TIN OXIDE FILMS DEPOSITED BY MAGNETRON SPUTTERING
    Zienius, Marius
    Laukaitis, Giedrius
    Sepetys, Arvydas
    5TH INTERNATIONAL CONFERENCE RADIATION INTERACTION WITH MATERIALS: FUNDAMENTALS AND APPLICATIONS 2014, 2014, : 198 - +
  • [2] The effect of annealing on the structural, electrical, optical and electrochromic properties of indium-tin-oxide films deposited by RF magnetron sputtering technique
    Yuzuak, Gizem Durak
    Coskun, Ozlem Duyar
    OPTIK, 2017, 142 : 320 - 326
  • [3] Reactive magnetron sputtering of indium tin oxide films on acrylics - Electrical resistivity and optical properties
    Huang, JL
    Jah, YT
    Chen, CY
    Yau, BS
    Lin, SS
    JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE, 2000, 9 (04) : 424 - 427
  • [4] Reactive magnetron sputtering of indium tin oxide films on acrylics—Electrical resistivity and optical properties
    Jow-Lay Huang
    Yin-Tsan Jah
    Ching-Yun Chen
    Bao-Shun Yau
    Su-Shia Lin
    Journal of Materials Engineering and Performance, 2000, 9 : 424 - 427
  • [5] Properties of annealed indium tin tantalum oxide films prepared by reactive magnetron sputtering
    Zhang, Bo
    INFORMATION ENGINEERING FOR MECHANICS AND MATERIALS RESEARCH, 2013, 422 : 70 - 74
  • [6] Crystallinity, etchability, electrical and mechanical properties of Ga doped amorphous indium tin oxide thin films deposited by direct current magnetron sputtering
    Lee, Hyun-Jun
    Song, Pung-Keun
    THIN SOLID FILMS, 2014, 559 : 53 - 57
  • [7] Electrical and Optical Properties of Eu-Doped Indium Oxide Thin Films Deposited by Radio-Frequency Magnetron Sputtering
    Woo, Jong-Kwan
    Cho, Shinho
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2014, 14 (12) : 8982 - 8986
  • [8] Characteristics of indium tin oxide films deposited by bias magnetron sputtering
    Sujatha, C
    Rao, GM
    Uthanna, S
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 94 (01): : 106 - 110
  • [9] Characteristics of zirconium-doped indium tin oxide thin films deposited by magnetron sputtering
    Zhang, Bo
    Dong, Xianping
    Xu, Xiaofeng
    Zhao, Pei
    Wu, Jiansheng
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2008, 92 (10) : 1224 - 1229
  • [10] Study of indium tin oxide films deposited on colorless polyimide film by magnetron sputtering
    Shen, Yi
    Feng, Zhaochang
    Zhang, Hanyan
    MATERIALS & DESIGN, 2020, 193