Studies on correction accuracy of proximity effect for the pattern area density method in electron beam direct writing

被引:2
作者
Kasuga, T
Konishi, M
Oda, T
Moriya, S
机构
[1] ULSI R and D Laboratories, Semiconductor Company, Sony Corp., Atsugi-shi 243, Asahi-cho
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 06期
关键词
D O I
10.1116/1.588684
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article describes the correction accuracy of the pattern area density method for 0.2 mu m rule patterning, carrying out simulation and experiments. To enhance the mu m correction accuracy at the boundary zone of the different pattern densities, a novel technique using the gradient vectors of the pattern density is proposed and its capability for sub-0.15-mu m pattern fabrication is demonstrated. (C) 1996 American Vacuum Society.
引用
收藏
页码:3870 / 3873
页数:4
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