Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies

被引：11

作者：

Hughes, Mark A. ^{[1
]}

Lourenco, Manon A. ^{[1
]}

Carey, J. David ^{[1
,2
]}

Ben Murdin ^{[1
]}

Homewood, Kevin P. ^{[1
]}

机构：

[1] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[2] Univ Surrey, Dept Elect Engn, Guildford GU2 7XH, Surrey, England

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 24期

基金：

欧洲研究理事会; 英国工程与自然科学研究理事会;

关键词：

ELECTRON-PARAMAGNETIC-RESONANCE; SINGLE-ION MAGNETS; MU-M LUMINESCENCE; ENERGY-LEVELS; DISLOCATION LOOPS; ERBIUM; PARAMETERS; ATOMS; ER; PHOTOLUMINESCENCE;

D O I：

10.1364/OE.22.029292

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the lattice site and symmetry of optically active Dy3+ and Tm3+ implanted Si. Local symmetry was determined by fitting crystal field parameters (CFPs), corresponding to various common symmetries, to the ground state splitting determined by photoluminescence measurements. These CFP values were then used to calculate the splitting of every J manifold. We find that both Dy3+ and Tm ions are in a Si substitution site with local tetragonal symmetry. Knowledge of rare-earth ion symmetry is important in maximising the number of optically active centres and for quantum technology applications where local symmetry can be used to control decoherence. (C) 2014 Optical Society of America

引用

页码：29292 / 29303

页数：12

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