Design and optimization of multithreshold CMOS (MTCMOS) circuits

被引:105
作者
Anis, M
Areibi, S
Elmasry, M
机构
[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada
[2] Univ Guelph, Sch Engn, Guelph, ON N1G 2W1, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
ground bounce; leakage power; low power; multithreshold voltage; PROCESSOR;
D O I
10.1109/TCAD.2003.818127
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Reducing power dissipation is one of the most important issues in very large scale integration design today. Scaling causes subthreshold leakage currents to become a large component of total power dissipation. Multithreshold technology has emerged as a promising technique to reduce leakage power. This paper presents several heuristic techniques for efficient gate clustering in multithreshold CMOS circuits by modeling the problem via bin-packing (BP) and set-partitioning (SP) techniques. The SP technique takes the circuit's routing complexity into consideration which is critical for deep submicron (DSM) implementations. By applying the techniques to six benchmarks to verify functionality, results obtained indicate that our proposed techniques can achieve on average 84% savings for leakage power and 12% savings for dynamic power. Furthermore, four hybrid clustering techniques that combine the BP and SP techniques to produce a more efficient solution are also devised. Ground bounce was also taken as a design parameter in the optimization problem. While accounting for noise, the proposed hybrid solution achieves on average 9% savings for dynamic power and 72% savings for leakage power dissipation at sufficient speeds and adequate noise margins.
引用
收藏
页码:1324 / 1342
页数:19
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