Switch opening time reduction in high power photoconducting semiconductor switches

被引：10
作者：
Hashimshony, D
Cohen, C
Zigler, A
Papadopoulos, K
机构：
[1] UNIV MARYLAND,COLLEGE PK,MD 20742
[2] APTI INC,WASHINGTON,DC 20037
来源：
OPTICS COMMUNICATIONS | 1996年 / 124卷 / 5-6期
关键词：
D O I：
10.1016/0030-4018(95)00685-0
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
It is shown experimentally and theoretically that the decay time of the current generated in a photoconductive switch can be controlled and significantly reduced, by the application of a strong magnetic field (mu(0)B > 1), without affecting its conductance during the illumination state. The application of the magnetic field has the added benefit of leading to a substantial reduction of the switch dark current.
引用
收藏
页码：443 / 447
页数：5
相关论文
共 13 条
[1]  
ALBECHT GF, 1981, OPT COMMUN, V40, P59
[2]  
CHEN JW, 1977, SOLID STATE ELECT, V22, P684
[3]   CARRIER MOBILITIES IN SILICON SEMI-EMPIRICALLY RELATED TO TEMPERATURE, DOPING AND INJECTION LEVEL [J].
DORKEL, JM ;
LETURCQ, P .
SOLID-STATE ELECTRONICS, 1981, 24 (09) :821-825
[4]   NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J].
ERGINSOY, C .
PHYSICAL REVIEW, 1950, 79 (06) :1013-1014
[5]  
LOUBRIEL GM, 1991, P 8 IEEE INT PULS PO
[6]   HIGH-POWER SWITCHING WITH PICOSECOND PRECISION [J].
MOUROU, G ;
KNOX, W .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :492-495
[7]  
MOUROU G, 1984, PICOSECOND OPTOELECT
[8]   ULTRAFAST MAGNETOPHOTOCONDUCTIVITY OF SEMI-INSULATING GALLIUM-ARSENIDE [J].
MOYER, RH ;
AGMON, P ;
KOCH, TL ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1981, 39 (03) :266-268
[9]  
Papadopoulos K., 1995, Comments on Plasma Physics and Controlled Fusion, V16, P221
[10]   MAGNETIC-FIELD EFFECTS IN A PHOTOCONDUCTIVE SWITCH [J].
PARIKH, CD ;
LINDHOLM, FA .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) :6546-6551
12