CMOS integrated highly efficient full wave rectifier

被引:59
作者
Peters, C. [1 ]
Kessfing, O. [1 ]
Henrici, F. [1 ]
Ortmanns, M. [1 ]
Manoli, Y. [1 ]
机构
[1] Univ Freiburg, Dept Microsyst Engn IMTEK, Chair Microelect, D-79110 Freiburg, Germany
来源
2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11 | 2007年
关键词
D O I
10.1109/ISCAS.2007.377947
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
This paper presents a novel architecture for a highly efficient rectifier circuit. The rectifier can be fully integrated using a standard CMOS process without special process options. The needed dynamic bulk regulation transistors are inherent in the first stage. A full wave rectifier with only one threshold voltage drop and an efficiency of approximately 50% is realized. In combination with a low-power active diode the proposed rectifier shows nearly no voltage drop and the efficiency rises up to 90%.
引用
收藏
页码:2415 / 2418
页数:4
相关论文
共 6 条
[1]  
Finkenzeller K., 2003, RFID HDB
[2]   Fully integrated wideband high-current rectifiers for inductively powered devices [J].
Ghovanloo, M ;
Najafi, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (11) :1976-1984
[3]  
KOLNSBERG S, 2001, THESIS U DUISBURG
[4]   Integrated low-loss CMOS active rectifier for wirelessly powered devices [J].
Lam, Yat-Hei ;
Ki, Wing-Hung ;
Tsui, Chi-Ying .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2006, 53 (12) :1378-1382
[5]   On-chip active power rectifiers for biomedical applications [J].
Lehmann, T ;
Moghe, Y .
2005 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLS 1-6, CONFERENCE PROCEEDINGS, 2005, :732-735
[6]  
PETERS C, 2006, 5 IEEE SENS C DAEG K