Direct Identification of the Conducting Channels in a Functioning Memristive Device

被引：300

作者：

Strachan, John Paul ^{[1
]}

Pickett, Matthew D. ^{[1
]}

Yang, J. Joshua ^{[1
]}

Aloni, Shaul ^{[2
]}

Kilcoyne, A. L. David ^{[3
]}

Medeiros-Ribeiro, Gilberto ^{[1
]}

Williams, R. Stanley ^{[1
]}

机构：

[1] Hewlett Packard Labs, Informat & Quantum Syst Lab, Palo Alto, CA 94304 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Mol Foundry, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 32期

关键词：

X-RAY-ABSORPTION; RESISTIVE SWITCHING MEMORIES; RESISTANCE; TITANIUM; SPECTRA; SRTIO3; FILMS; TIO2;

D O I：

10.1002/adma.201000186

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Titanium dioxide memristive devices have been non-destructively characterized using X-ray absorption spectromicroscopy and TEM. These techniques allow direct identification of the chemistry and structure of the conducting channel responsible for the bipolar resistance switching seen in these devices. Within the TiO2 matrix, we observe the formation of a Ti4O7 Magneli phase possessing metallic properties and ordered planes of oxygen vacancies.

引用

页码：3573 / +

页数：6

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