Electrostatically Induced Superconductivity at the Surface of WS2

被引：148

作者：

Jo, Sanghyun ^{[1
,2
]}

Costanzo, Davide ^{[1
,2
]}

Berger, Helmuth ^{[3
]}

Morpurgo, Alberto F. ^{[1
,2
]}

机构：

[1] Univ Geneva, DQMP, CH-1211 Geneva, Switzerland

[2] Univ Geneva, GAP, CH-1211 Geneva, Switzerland

[3] Ecole Polytech Fed Lausanne, Inst Phys Mat Complexe, CH-1015 Lausanne, Switzerland

来源：

NANO LETTERS | 2015年 / 15卷 / 02期

基金：

瑞士国家科学基金会;

关键词：

WS2; transition metal dichalcogenides; ionic liquid gating; superconductivity; potential fluctuation; BKT transition; TRANSPORT-PROPERTIES; VALLEY POLARIZATION; MONOLAYER; MOS2; TRANSITION; CHEMISTRY; MOBILITY; DIODES; SPIN;

D O I：

10.1021/nl504314c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigate transport through ionic liquid gated field effect transistors (FETs) based on exfoliated crystals of semiconducting WS2. Upon electron accumulation, at surface densities close to, or just larger than, 10(14) cm(2), transport exhibits metallic behavior with the surface resistivity decreasing pronouncedly upon cooling. A detailed characterization as a function of temperature and magnetic field clearly shows the occurrence of a gate-induced superconducting transition below a critical temperature Tc 4 K, a finding that represents the first demonstration of superconductivity in tungsten-based semiconducting transition metal dichalcogenides. We investigate the nature of superconductivity and find significant inhomogeneity, originating from the local detaching of the frozen ionic liquid from the WS2 surface. Despite the inhomogeneity, we find that in all cases where a fully developed zero resistance state is observed, different properties of the devices exhibit a behavior characteristic of a BerezinskiiKosterlitzThouless transition, as it could be expected in view of the two-dimensional nature of the electrostatically accumulated electron system

引用

页码：1197 / 1202

页数：6

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