Comparison of the removal efficiency for organic contaminants on silicon wafers stored in plastic boxes between UV/O3 and ECR oxygen plasma cleaning methods

被引:27
作者
Choi, K [1 ]
Eom, TJ [1 ]
Lee, C [1 ]
机构
[1] Inha Univ, Dept Mat Sci & Engn, Inchon 40275, South Korea
关键词
dry cleaning; organic contaminants; electron cyclotron resonance (ECR) plasma; UV/O-3; attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR); atomic force microscopy (AFM);
D O I
10.1016/S0040-6090(03)00329-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
When wafers are stored in a plastic storage box to protect them from airborne contaminants, volatile organics from the polymeric construction material adsorb onto the wafer surface. Both UV/O-3 and ECR oxygen plasma techniques have been found to completely remove these organic contaminants adsorbed on the silicon surfaces up to the detection limit. After cleaning, Si wafers were characterized using attenuated total reflection-Fourier transform, infrared spectroscopy (ATR-FTIR) and atomic force microscopy (AFM). Organic contaminants were eliminated more efficiently by the ECR oxygen plasma technique than the UV/O-3 technique when they were employed under optimum process conditions. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:227 / 231
页数:5
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