3-D capacitive interconnections with mono- and bi-directional capabilities

被引:43
作者
Fazzi, Alberto [1 ]
Canegallo, Roberto [2 ]
Ciccarelli, Luca [2 ]
Magagni, Luca [1 ]
Natali, Federico [1 ]
Jung, Erik [3 ]
Rolandi, Pierluigi [2 ]
Guerrieri, Roberto [1 ]
机构
[1] Univ Bologna, ARCES, I-40100 Bologna, Italy
[2] SGS Thomson Microelect, I-20041 Agrate Brianza, MI, Italy
[3] Fraunhofer IZM, D-13355 Berlin, Germany
关键词
bidirectional; capacitive interconnections; low-power; monodirectional; 3-D integration;
D O I
10.1109/JSSC.2007.914762
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A wireless interconnection scheme based on capacitive coupling provides mono- and bi-directional transmission capabilities for 3-D system integration. Chips are implemented in 0.13 mu m CMOS technology and assembled face-to-face at die-level. RX-TX circuits are specifically designed for low-power functionality and the implementation takes advantage of the two different voltage thresholds that are available for the standard transistors in the CMOS process we used. The communication circuits are coupled via electrodes with an area down to 8 x 8 mu m(2) and this enables the vertical propagation of clock signals at 1.7 GHz, a propagation delay of 420 ps for general purpose signals and a throughput of more than 22 Mb/s/mu m(2) with 0.08 pJ/b energy consumption.
引用
收藏
页码:275 / 284
页数:10
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