TSV-Based 3D Integration Fabrication Technologies: An Overview

被引：0

作者：

Salah, Khaled ^{[1
]}

机构：

[1] Mentor Graph Corp, Cairo Governorate, Egypt

来源：

2014 9TH INTERNATIONAL DESIGN & TEST SYMPOSIUM (IDT) | 2014年

关键词：

3D technologies; TSV; 3D Process; 3D Technology; 3D Integration; 3D fabrication;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

3D Integration is a promising and attractive solution for interconnect bottleneck problem, transistor scaling physical limitations, and impractical small-scale lithography. 3D integration extends Moore's law in the third dimension, offering heterogeneous integration, higher density, lower power consumption, and faster performance. However, in order to fabricate 3D ICs, new capabilities are needed: process technology, physical modeling, physical design tools, 3D architectures, design methods and tools. The goal of this paper is to cover the manufacturability of TSV-based 3D-ICs i.e. process technology, and fabrication capability.

引用

页码：253 / 256

页数：4

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