Vacuum annealed Ga:ZnO (GZO) thin films for solar cell integrated transparent antenna application

被引:8
作者
Alobaidi, O. R. [1 ]
Chelvanathan, P. [2 ,3 ]
Bais, B. [1 ]
Sopian, K. [2 ]
Alghoul, M. A. [4 ]
Akhtaruzzaman, Md [2 ]
Amin, N. [1 ,5 ]
机构
[1] Univ Kebangsaan Malaysia, Fac Engn & Built Environm, Dept Elect Elect & Syst Engn, Bangi 43600, Selangor, Malaysia
[2] Natl Univ Malaysia, Solar Energy Res Inst SERI, Bangi 43600, Selangor, Malaysia
[3] Sunway Univ, Sch Sci & Technol SST, Graphene & Adv 2D Mat Res Grp GAMRG, 5 Jalan Univ, Bandar Sunway 47500, Selangor, Malaysia
[4] King Fahd Univ Petr & Minerals, Ctr Res Excellence Renewable Energy Res Inst, Dhahran 31261, Saudi Arabia
[5] Natl Energy Univ, Univ Tenaga Nasl, Inst Sustainable Energy ISE, Jalan IKRAM UNITEN, Kajang 43000, Selangor, Malaysia
关键词
Ga doped ZnO; Transparent conductive oxide (TCO); Transparent antenna; Thin film; Annealing; GA-DOPED ZNO; SUBSTRATE-TEMPERATURE;
D O I
10.1016/j.matlet.2021.130551
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Over the last decade, optically transparent antennas have been the focus of study for applications ranging from satellite networking to window embedded telecommunications. In this letter, the feasibility of DC-sputtered GZO thin films as an active material for transparent antenna application is briefly investigated. We commence by showing that the optoelectronic properties, namely the optical band gap and electrical conductivity, can be significantly enhanced by vacuum annealing at 550 degrees C. The improvement in electrical conductivity translates to higher return loss and gains for microstrip patch transparent antenna, meanwhile, the increase in band gap results in higher optical transparency, which in return boosts the power conversion efficiency of the underlying solar cell device. This study serves as a groundwork for scalable fabrication route for GZO thin films for solar cell integrated transparent antenna application.
引用
收藏
页数:5
相关论文
共 15 条
[1]  
Alobaidi O.R., 2020, IEEE ACCESS, P1
[2]   Interplay between variable direct current sputtering deposition process parameters and properties of ZnO:Ga thin films [J].
Ferdaous, Mohammad Tanvirul ;
Shahahmadi, Seyed Ahmad ;
Sapeli, Megat Mohd Izhar ;
Chelvanathan, Puvaneswaran ;
Akhtaruzzaman, Md ;
Tiong, Sieh Kiong ;
Amin, Nowshad .
THIN SOLID FILMS, 2018, 660 :538-545
[3]  
Gao X, 2015, IEEE ANTENNAS PROP, P2321, DOI 10.1109/APS.2015.7305549
[4]  
Kapilevich I., 2009, 2009 34 IEEE PHOT SP
[5]   Sodium Benzenesulfonate Modified Poly (3,4-Ethylenedioxythiophene):Polystyrene Sulfonate with Improved Wettability and Work Function for Efficient and Stable Perovskite Solar Cells [J].
Li, Wei ;
Wang, Huaxin ;
Hu, Xiaofei ;
Cai, Wensi ;
Zhang, Cong ;
Wang, Ming ;
Zang, Zhigang .
SOLAR RRL, 2021, 5 (01)
[6]  
Maness LV, 2010, IEEE PHOT SPEC CONF
[7]  
Neveu N, 2013, INT CONF WIREL SPAC
[8]   Effects of substrate temperature on the properties of Ga-doped ZnO by pulsed laser deposition [J].
Park, Sang-Moo ;
Ikegami, Tomoaki ;
Ebihara, Kenji .
THIN SOLID FILMS, 2006, 513 (1-2) :90-94
[9]   Annealing-induced modifications in sol-gel spin-coated Ga:ZnO thin films [J].
Serrao, Felcy Jyothi ;
Sandeep, K. M. ;
Dharmaprakash, S. M. .
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2016, 78 (02) :438-445
[10]   Highly conducting transparent indium tin oxide films prepared by pulsed laser deposition [J].
Suzuki, A ;
Matsushita, T ;
Aoki, T ;
Mori, A ;
Okuda, M .
THIN SOLID FILMS, 2002, 411 (01) :23-27