Review of the Thermoelectric Properties in Nanostructured Fe2VAl

被引:29
作者
Alleno, Eric [1 ]
机构
[1] Univ Paris Est, Inst Chim & Mat Paris Est, UMR CNRS UPEC 7182, 2 Rue H Dunant, F-94320 Thiais, France
关键词
thermoelectricity; Heusler alloys; thermal conductivity; electrical resistivity; grain boundaries; ball-milling; high pressure torsion; HIGH-PRESSURE TORSION; FIGURE-OF-MERIT; SUBSTITUTION; SILICON; MICROSTRUCTURE;
D O I
10.3390/met8110864
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Besides alloying, nanostructuring was implemented to improve the thermoelectric properties in Fe2VAl. This Heusler alloy indeed displays a thermoelectric figure of merit too small for applications (ZT similar to 0.1 at 300 K) which is caused by a large lattice thermal conductivity (lambda(L) = 27 W.m(-1).K-1 at 300 K). The effect of nanostructuring on the microstructure and on the thermoelectric properties of alloyed Fe2VAl are therefore reviewed. By mechanical alloying followed by spark plasma sintering, the average grain size (D) was decreased to D similar to 300-400 nm in Fe2VAl0.9Si0.1, Fe2VAl0.9Si0.07Sb0.03, Fe2V1.05Al0.95, and Fe2V0.9W0.1Al. As expected, phonon scattering at the numerous grain boundaries lead to a strong decrease in the lattice thermal conductivity, which reached values as small as lambda(L) = 3.3 W.m(-1).K-1. However, in all the reviewed examples, the thermoelectric figure of merit (ZT) is only marginally or not even improved when comparing to non-nanostructured samples because the electrical resistivity also increases upon nanostructuring. A significantly improved ZT = 0.3 at 500 K was only recently observed in severely deformed Fe2VAl0.95Ta0.05 by high pressure torsion because the very fine microstructure (D similar to 100 nm) strongly enhanced the thermal conductivity reduction.
引用
收藏
页数:7
相关论文
共 32 条
[1]  
[Anonymous], INTERNET OF THINGS
[2]   High thermoelectric figure of merit in mesostructured In0.25Co4Sb12 n-type skutterudite [J].
Benyahia, M. ;
Ohorodniichuk, V. ;
Leroy, E. ;
Dauscher, A. ;
Lenoir, B. ;
Alleno, E. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 735 :1096-1104
[3]  
Bhandari C.M., 1995, CRC Handbook of Thermoelectrics
[4]   Nanostructured Bulk Silicon as an Effective Thermoelectric Material [J].
Bux, Sabah K. ;
Blair, Richard G. ;
Gogna, Pawan K. ;
Lee, Hohyun ;
Chen, Gang ;
Dresselhaus, Mildred S. ;
Kaner, Richard B. ;
Fleurial, Jean-Pierre .
ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (15) :2445-2452
[5]  
Felser C., 2016, HEUSLER ALLOYS, V222
[6]   Enhancement in Thermoelectric Figure-Of-Merit of an N-Type Half-Heusler Compound by the Nanocomposite Approach [J].
Joshi, Giri ;
Yan, Xiao ;
Wang, Hengzhi ;
Liu, Weishu ;
Chen, Gang ;
Ren, Zhifeng .
ADVANCED ENERGY MATERIALS, 2011, 1 (04) :643-647
[7]   Enhanced Thermoelectric Figure-of-Merit in Nanostructured p-type Silicon Germanium Bulk Alloys [J].
Joshi, Giri ;
Lee, Hohyun ;
Lan, Yucheng ;
Wang, Xiaowei ;
Zhu, Gaohua ;
Wang, Dezhi ;
Gould, Ryan W. ;
Cuff, Diana C. ;
Tang, Ming Y. ;
Dresselhaus, Mildred S. ;
Chen, Gang ;
Ren, Zhifeng .
NANO LETTERS, 2008, 8 (12) :4670-4674
[8]  
Kamiya N., 2011, Patent, Patent No. [JP2011233797A, 2011233797]
[9]   Effect of silicon substitution on thermoelectric properties of Heusler-type Fe2VAl alloy [J].
Kato, H ;
Kato, M ;
Nishino, Y ;
Mizutani, U ;
Asano, S .
JOURNAL OF THE JAPAN INSTITUTE OF METALS, 2001, 65 (07) :652-656
[10]   Impurity band effects on transport and thermoelectric properties of Fe2-xNixVAl [J].
Knapp, I. ;
Budinska, B. ;
Milosavljevic, D. ;
Heinrich, P. ;
Khmelevskyi, S. ;
Moser, R. ;
Podloucky, R. ;
Prenninger, P. ;
Bauer, E. .
PHYSICAL REVIEW B, 2017, 96 (04)