Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

AlGaN/GaN high-electron-mobility transistor structures grown on 100 mm high-resistivity Si(111) substrates using plasma-assisted molecular beam epitaxy are reported. The two-dimensional electron gas (2DEG) formation in the heterostructures was realized by the growth optimization of two-step low temperature and high temperature AlN layers and GaN buffer layer. High-electron mobility of 1100 cm(2)/V s with a sheet carrier density of 9 x 10(12) cm(-2) was achieved. The presence of 2DEG in the AlGaN/GaN interface was confirmed by temperature dependent Hall measurements and capacitance-voltage carrier profiling. The fabricated 1.5 mu m gate length high electron mobility transistor exhibited a maximum drain current density of 530 mA/mm and a peak extrinsic transconductance of 156 mS/mm. (C) 2010 American Institute of Physics. [doi:10.1063/1.3518717]