Field-effect transistors using Langmuir-Blodgett films of neutral long-chain TCNQ derivatives

被引：8
|
作者：
Ohnuki, H
Ikegami, K
Ida, T
Izumi, M
机构：
[1] Tokyo Univ Marine Sci & Technol, Appl Phys Lab, Koto Ku, Tokyo 1358533, Japan
[2] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan
[3] RIKEN, Semicond Lab, Wako, Saitama 3510198, Japan
来源：
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS | 2005年 / 257-58卷
关键词：
FET; OTFT; Langmuir-Blodgett films; TCNQ; odd and even effect;
D O I：
10.1016/j.colsurfa.2004.10.024
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Fabrication of field-effect transistors (FET) Using the Langmuir-Blodgett films of neutral TCNQ derivatives with long alkyl-chain is reported. The films of neutral TCNQ derivatives (C-n-TCNQ; n = 12 15, 18) were employed as the active layers of FET. The FET characteristics of n-type semiconductor were clearly observed. It was found that the field-effect mobility depends on the alkyl-chain length. Infrared absorption spectroscopy implies that the lateral packing manner of molecules is affected by whether the number of carbon atoms in the alkyl-chain is odd or even. Such odd-even effect seems to be responsible for the different field-effect mobility values. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：381 / 384
页数：4
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