Recrystallization Phase in He-Implanted 6H-SiC

被引：5

作者：

Liu, Yu-Zhu ^{[1
]}

Li, Bing-Sheng ^{[2
]}

Lin, Hua ^{[1
]}

Zhang, Li ^{[3
]}

机构：

[1] Nanjing Univ Informat Sci & Technol, Jiangsu Collaborat Innovat Ctr Atmospher Environm, Nanjing 210044, Jiangsu, Peoples R China

[2] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China

[3] Lanzhou Univ Technol, Sch Sci, Dept Phys, Lanzhou 730050, Gansu, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2017年 / 34卷 / 07期

基金：

中国国家自然科学基金;

关键词：

AMORPHOUS-SILICON CARBIDE; ION; IRRADIATION;

D O I：

10.1088/0256-307X/34/7/076101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of recrystallized layers in 15 keV He+ ion implanted 6H-SiC (0001) wafers are characterized by means of cross-sectional transmission electron microscopy (XTEM) and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900 degrees C. The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations. A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. With increasing annealing to 1000 degrees C, 3C-SiC and columnar epitaxial growth 6H-SiC become unstable, instead of [0001] orientated 6H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing. The possible mechanisms for explanation are also discussed.

引用

页数：4

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