Evaluation of dislocation densities in HgCdTe films by high resolution X-ray diffraction

被引:1
|
作者
Wang, QX [1 ]
Yang, JR [1 ]
Wei, YF [1 ]
Fang, WZ [1 ]
Li, H [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Res Ctr Adv Mat & Devices, Shanghai 200083, Peoples R China
关键词
H-CdTe; dislocation density; DAD-FWHM; Williamson-Hall plot; pseudo-voigt function;
D O I
10.1117/12.572209
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The dislocation densities in HgCdTe films grown on CdZnTe by Liquid Phase Epitaxy (LPE) are calculated based on their effects on the x-ray rocking curves. The dislocation densities derived from three kinds of methods, i.e. FWHM of X-ray double axis diffraction, Williamson-Hall plot and Pseudo-Voigt function, are approximately the same. It is found that the thickness of HgCdTe epilayers about 10 mu m is large enough so that effect of crystallize size on the rocking curves width can be ignored. Because the intrinsic FWHM of HgCdTe and the instrumental function of high resolution X-ray diffraction are neglected in Williamson-Hall plot and Pseudo-Voigt function, the dislocation densities obtained by these methods are a little larger than those derived from the first kind of method. Among three kinds of methods, Pseudo-Voigt function method is the easiest one to fit the rocking curves and calculate the dislocation densities.
引用
收藏
页码:629 / 636
页数:8
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