An analytical model of small-signal parameters for GaAs/AlGaAs inverted high electron mobility transistors

被引：6
作者：
Liu, KW
Anwar, AFM
机构：
[1] Ming Chuan Univ, Taipei 111, Taiwan
[2] Univ Connecticut, Dept Elect & Syst Engn, Storrs, CT 06269 USA
来源：
MICROELECTRONICS JOURNAL | 2001年 / 32卷 / 01期
关键词：
inverted high-electron mobility transistors; self-consistent; small-signal parameters;
D O I：
10.1016/S0026-2692(00)00110-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical model to calculate the small-signal parameters for GaAs/AlGaAs inverted high electron mobility transistors is presented. The model is based on a self-consistent solution of the Schrodinger and Poisson's equations and non-linear velocity-electric field (v(d) - E) characteristic to evaluate the small-signal parameters for this class of devices. These include transconductance g(m), drain resistance r(d), gate source capacitance C-gs and unity current gain cut-off frequency f(T). The analytical results are compared with the experimental data and show excellent agreement. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：85 / 88
页数：4
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