Improved 20V lateral trench gate power MOSFETs with very low on-resistance of 7.8 mΩ•mm2

被引：13
|
作者：
Nakagawa, A [1 ]
Kawaguchi, Y [1 ]
机构：
[1] Toshiba Corp, Adv Discrete Semicond Technol Lab, Saiwai Ku, Kawasaki, Kanagawa 210, Japan
来源：
12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/ISPSD.2000.856770
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We propose an improved lateral trench gate MOSFET with a new trench drain contact. The device is predicted to achieve 25V breakdown voltage and a very low on-resistance of 7.8 m Omega .mm(2), which is by 20% lower than that of previously proposed standard lateral trench gate MOSFETs. The proposed trench contact uniformly distributes the electron current in the drift layer, and effectively reduces the device on-resistance. In the present paper, we also show the detailed electrical characteristics of the fabricated standard trench gate LDMOS. The large current turn-off capability of 1.1x10(4) A/cm(2) was achieved by the fabricated device.
引用
收藏
页码：47 / 50
页数：4
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