Scatterometric porosimetry: A new characterization technique for porous material patterned structures

被引：10
作者：
Bouyssou, R. [1 ]
El Kodadi, M. [1 ]
Licitra, C.
Chevolleau, T. [1 ]
Besacier, M. [1 ]
Posseme, N.
Joubert, O. [1 ]
Schiavone, P. [1 ]
机构：
[1] CEA, LETI, MINATEC, LTM CNRS UJF INP, F-38054 Grenoble 09, France
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 04期
关键词：
PORE-SIZE DISTRIBUTION; THIN-FILMS; ELLIPSOMETRY;
D O I：
10.1116/1.3457489
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new technique, so called "scatterometric porosimetry" (SP) has been developed to improve our knowledge on the properties of porous material patterned structures. None of the existing techniques is able to characterize the porous material structures after patterning. SP is based on the measurement of the refractive index variation of porous material structures (lines and holes) when filled with a solvent (toluene, methanol, and water). This technique is applied to monitor the modifications in low-K dielectric materials (porous SiOCH) after the plasma patterning steps used to form lines and vias in the porous materials in a typical dual damascene CMOS technology process. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3457489]
引用
收藏
页码：L31 / L34
页数：4
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