Bridged-shunt-series peaking technique for a 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier

An ultra-wideband 3.1-10.6-GHz. low noise amplifier (LNA) adopting inductive peaking technique for bandwidth extension is presented. Fabricated in a 0.18-mu m CMOS process, the proposed circuit can both satisfy the maximum bandwidth and the maximally flat response. The feedback resistor provides good input match while contributing a small amount in noise figure degradation. The presented LNA achieves a maximum power gain of 14.1 dB within a 3-dB bandwidth from 2.2 to 11 GHz and a good noise figure from 3.4 to 4.5 dB in the entire UWB band, and an IIP3 better than -3 dBm while drawing 30 mW from a 1.5-V supply. (c) 2008 Wiley Periodicals, Inc.