A comparative study of copper thin films deposited using magnetron sputtering and supercritical fluid deposition techniques

被引：36

作者：

Giroire, B. ^{[1
,2
]}

Ahmad, M. Ali ^{[1
,2
]}

Aubert, G. ^{[1
,2
]}

Teule-Gay, L. ^{[1
,2
]}

Michau, D. ^{[1
,2
]}

Watkins, J. J. ^{[3
]}

Aymonier, C. ^{[1
,2
]}

Poulon-Quintin, A. ^{[1
,2
]}

机构：

[1] CNRS, ICMCB, UPR 9048, 87 Ave Dr A Schweitzer, F-33600 Pessac, France

[2] Univ Bordeaux, ICMCB, UPR 9048, 87 Ave Dr A Schweitzer, F-33600 Pessac, France

[3] Univ Massachusetts, Dept Polymer Sci & Engn, 120 Governors Dr, Amherst, MA 01003 USA

来源：

THIN SOLID FILMS | 2017年 / 643卷

关键词：

Copper; Thin films; Supercritical fluid chemical deposition; Sputtering; Resistivity; Microstructure; CARBON-DIOXIDE; ELECTRICAL-RESISTIVITY; REACTIVE DEPOSITION; CU; POWER; CVD; MICROSTRUCTURE; TEMPERATURE; FABRICATION; SUBSTRATE;

D O I：

10.1016/j.tsf.2017.09.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A comparison of crystallinity, microstructure, surface morphology and electrical conductivity is proposed for the deposition of copper films, using supercritical fluid chemical deposition (SFCD) and RF magnetron sputtering techniques. Both preparation methods yield nanocrystalline Cu films (< 100 nm) but SFCD gives access to a higher crystallinity for the same AlN substrate temperature during the deposit. Based on the film characteristics, a comparison of the evolution of electrical properties is done for RF magnetron sputtered copper films and SFCD ones with H-2 as reducing agent. Uniform strain values are significantly reduced when SFCD technique is used and crystallinity is highly increased leading to lower resistivity values for a same crystallite size. This study demonstrates the viability of the SFCD technique to produce high quality nanostructured copper thin films with low resistivity values. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：53 / 59

页数：7

共 48 条

[1] Electroless copper deposition on silicon with titanium seed layer [J].