Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures

被引：15

作者：

Ahmeda, Khaled ^{[1
]}

Ubochi, Brendan ^{[1
]}

Benbakhti, Brahim ^{[2
]}

Duffy, Steven J. ^{[2
]}

Soltani, Ali ^{[3
,4
]}

Zhang, Wei Dong ^{[2
]}

Kalna, Karol ^{[1
]}

机构：

[1] Swansea Univ, Coll Elect & Elect Engn, Nanoelect Devices Computat Grp, Swansea SA2 8PP, W Glam, Wales

[2] Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England

[3] Univ Sherbrooke, Lab Nanotechnol & Nanosyst, Sherbrooke, PQ J1K 0A5, Canada

[4] Univ Lille, Inst Elect Microelect & Nanotechnol, F-59650 Lille, France

来源：

IEEE ACCESS | 2017年 / 5卷

关键词：

III-V nitrides; self-heating; polarization; TLM structures; electro-thermal transport simulations; ELECTRON-MOBILITY TRANSISTORS; GAN; SEMICONDUCTOR; HEMTS; PERFORMANCE; TRANSPORT; DEFECTS; HFETS; FIELD;

D O I：

10.1109/ACCESS.2017.2755984

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The interplay of self-heating and polarization affecting resistance is studied in AlGaN/GaN transmission line model (TLM) heterostructures with a scaled source-to-drain distance. This paper is based on meticulously calibrated TCAD simulations against I-V experimental data using an electro-thermal model. The electro-thermal simulations show hot-spots (with peak temperature in a range of similar to 566 K-373 K) at the edge of the drain contact due to a large electric field. The electrical stress on Ohmic contacts reduces the total polarization, leading to the inverse/converse piezoelectric effect. This inverse effect decreases the polarization by 7%, 10%, and 17% during a scaling of the source-to-drain distance in the 12 mu m, 8 mu m, and 4 mu m TLM heterostructures, respectively, when compared with the largest 18-mu m heterostructure.

引用

页码：20946 / 20952

页数：7

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