Determination of optical constants of ZnxIn1-xSe thin films deposited by evaporation

Polycrystalline ZnxIn1-xSe thin films with Se contents varying between x=0 (InSe) and x=1 (ZnSe), deposited on glass substrates, were optically characterized. These samples were grown by coevaporation of the ZnSe and ln(2)Se(3) compounds using a crucible constituted by two coaxial chambers. The optical constants (refractive index n, absorption coefficient alpha and optical gap Eg) and the film thickness d, were determined using the transmission spectrum and simple calculations based on a theoretical model including interference effect induced by multiple internal reflections in the substrate/film system. The reliability of the results was tested by comparing the experimental transmittance spectra with the theoretically ones, using values of n, alpha and d obtained experimentally.