PLATOP: A novel planarized trench isolation and field oxide formation using poly-silicon

被引：4

作者：

Bashir, R ^{[1
]}

Hebert, F ^{[1
]}

机构：

[1] NATL SEMICOND CORP,ANALOG PROC TECHNOL DEV,SANTA CLARA,CA 95051

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 07期

关键词：

D O I：

10.1109/55.506364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel isolation scheme named planarized trench isolation and field oxide formation using poly-silicon (PLATOP) is described. PLATOP is applicable to high-performance submicron VLSI since it results in encroachment-free shallow trenches, and planarized field oxide. The process offers poly-silicon-filled deep trenches. The process also relies on noncritical lithography and novel etch processes to planarize the deposited poly-silicon from the top of the active areas, and oxidation to consume the polysilicon in the field regions. Electrical results are presented proving the viability of the isolation scheme.

引用

页码：352 / 354

页数：3