Thick cubic GaN film growth using ultra-thin low-temperature buffer layer by RF-MBE

被引：12

作者：

Kimura, R ^{[1
]}

Suzuki, T ^{[1
]}

Ouchi, M ^{[1
]}

Ishida, K ^{[1
]}

Takahashi, K ^{[1
]}

机构：

[1] Teikyo Univ Sci & Technol, Dept Media Sci, Yamanashi 4090193, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

crystal structure; reflection high-energy electron diffraction; X-ray diffraction; molecular beam epitaxy; nitrides; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2005.01.058

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

1.8 mu m thick high-quality cubic GaN film was successfully grown on GaAs (100) using an ultra-thin, low-temperature GaN buffer layer by a plasma-assisted molecular beam epitaxy. The 'as-grown' low-temperature buffer layer was amorphous and ultra-thin (similar to 6 angstrom), which is a necessity condition to grow a pure cubic GaN epilayer. FWHM of X-ray rocking curve (c-GaN (200) diffraction) is as narrow as 28.7 arcmin. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：411 / 414

页数：4

共 9 条

[1] SUBSTRATE NITRIDATION EFFECTS ON GAN GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY USING RF-RADICAL NITROGEN-SOURCE [J].

KIKUCHI, A ;

HOSHI, H ;

KISHINO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B) :688-693

[2]

KIM M, 2002, J CRYST GROWTH, V465, P251

[3] High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy [J].

Kimura, R ;

Gotoh, Y ;

Matsuzawa, T ;

Takahashi, K .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :382-386

[4] TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF CUBIC GAN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY WITH DIMETHYLHYDRAZINE ON (001) GAAS [J].

KUWANO, N ;

NAGATOMO, Y ;

KOBAYASHI, K ;

OKI, K ;

MIYOSHI, S ;

YAGUCHI, H ;

ONABE, K ;

SHIRAKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A) :18-22

[5]

Shike J, 2003, MATER RES SOC SYMP P, V743, P175

[6] Critical roles of decomposition-shielding layer deposited at low temperature governing the structural and photoluminescence properties of cubic GaN epilayers grown on (001)GaAs by metalorganic vapor phase epitaxy [J].

Sugiyama, M ;

Nosaka, T ;

Onuma, T ;

Nakajima, K ;

Ahmet, P ;

Aoyama, T ;

Chikyow, T ;

Chichibu, SF .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (01) :106-110

[7] Metalorganic vapor phase epitaxy growth of high quality cubic GaN on GaAs (100) substrates [J].

Wu, J ;

Yaguchi, H ;

Onabe, K ;

Shiraki, Y ;

Ito, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B) :1440-1442

[8]

YAMAGUCHI T, 2003, MAT RES SOC S P, V743

[9] The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001) [J].

Zsebök, O ;

Thordson, JV ;

Gunnarsson, JR ;

Zhao, QX ;

Ilver, L ;

Andersson, TG .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) :3662-3667

← 1 →