A Millimeter Wave Loss-Aware Methodology for Switchless PALNA Integrated Circuit Design

被引:3
作者
Abdomerovic, Iskren [1 ]
Raman, Sanjay [1 ]
机构
[1] Virginia Tech, Dept Elect & Comp Engn, Arlington, VA 24061 USA
关键词
Bidirectional transmit/receive (T/R) circuits; low noise amplifier (LNA); low noise amplifier/power amplifier (LNAPA); noise figure (NF); output power (Pout); phased arrays; power added efficiency (PAE); power amplifier (PA); power amplifier/low noise amplifier (PALNA); switchless T/R circuits; T/R circuits; BIDIRECTIONAL AMPLIFIER; SOI;
D O I
10.1109/TCAD.2018.2878189
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Phased array element RF front ends typically use single pole double throw switches or circulators with high isolation to prevent leakage of transmit energy into the receiver circuits. However, as phased-array designs scale to the millimeter-wave range, with high degrees of integration, physical size, and performance degradations associated with switches and circulators can present challenges in meeting system performance and SWAP requirements. This paper provides a loss-aware methodology for analysis and design of switchless transmit/receive (T/R) circuits. The methodology provides design insights and a practical, generally applicable approach for solving the multivariable optimization problem of switchless power amplifier/low-noise amplifier (PALNA) matching networks, which present optimal matching impedances to both the PALNA while maximizing power transfer efficiency and minimizing dissipative losses in each T/R mode of operation. An example design in global foundries 32SOI CMOS at W-band using the proposed methodology is presented. The design achieves simulated maximum power added efficiency of 18% in transmit and noise figure of 7.5 dB in receive at 94 GHz.
引用
收藏
页码:2177 / 2190
页数:14
相关论文
共 22 条
[1]  
Abdomerovic I., 2018, P GOV MICR APPL CRIT, P685
[2]   Leveraging Integration [J].
Abdomerovic, Iskren ;
Palmer, William D. ;
Watson, Paul M. ;
Worley, Rick ;
Raman, Sanjay .
IEEE MICROWAVE MAGAZINE, 2014, 15 (03) :86-96
[3]   Complex Impedance Transformers Consisting of Only Transmission-Line Sections [J].
Ahn, Hee-Ran .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (07) :2073-2084
[4]  
[Anonymous], P TOP S MIL WAV JUL
[5]  
Archer J. W., 1999, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369), P251, DOI 10.1109/GAAS.1999.803769
[6]   INSERTION LOSS CONCEPTS [J].
BEATTY, RW .
PROCEEDINGS OF THE IEEE, 1964, 52 (06) :663-&
[7]   High-Power High-Efficiency Class-E-Like Stacked mmWave PAs in SOI and Bulk CMOS: Theory and Implementation [J].
Chakrabarti, Anandaroop ;
Krishnaswamy, Harish .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (08) :1686-1704
[8]   A Millimeter-Wave Non-Magnetic Passive SOI CMOS Circulator Based on Spatio-Temporal Conductivity Modulation [J].
Dinc, Tolga ;
Nagulu, Aravind ;
Krishnaswamy, Harish .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2017, 52 (12) :3276-3292
[9]  
Fanyi Meng, 2016, 2016 IEEE International Workshop on Electromagnetics (iWEM): Applications and Student Innovation Competition, P1, DOI 10.1109/iWEM.2016.7504891
[10]  
Iniewski K., 2007, WIRELESS TECHNOLOGIE, P329