E-beam pumped resonant periodic gain GaInP/AlGaInP VCSEL

被引：1

作者：

Bondarev, VY ^{[1
]}

Kozlovsky, VI ^{[1
]}

Krysa, AB ^{[1
]}

Roberts, JS ^{[1
]}

Skasyrsky, YK ^{[1
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia

来源：

Fourth International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN4) | 2005年 / 2卷 / 02期

关键词：

D O I：

10.1002/pssc.200460342

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

25-period Ga0.5In0.5P/(Al0.7Ga0.3)(0.5)In0.5P quantum well structure was grown by MOVPE on GaAs substrates misoriented by 10(0) from (001) to (111)A and fabricated into a microcavities with dielectric oxide mirrors. The structure period and mirror design were chosen to provide resonant periodic gain. A non-uniformity of 5% in the total structure thickness across the 2 inch wafer was used for studying laser characteristics depending on mismatching structure period from resonance condition. The laser wavelength, threshold and output power was found to depend critically on the alignment of QW period with both the cavity and the MQW gain spectrum. Lasing in the 625-650 nm spectral range with output power up to 9 W (0.45 MW/cm(2)) was achieved under scanning electron beam longitudinal pumping at room temperature. The minimum threshold current density for a 40 keV electron energy was 8 A/cm(2) (0.32 MW/cm(2)). In order to control the lasing threshold to within 10% of its minimum, the MQW period should be tuned to the optimum value with an accuracy of about 1%. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：931 / 934

页数：4