Structural stability and Raman scattering of InN nanowires under high pressure

被引：13

作者：

Yao, L. D. ^{[1
]}

Luo, S. D. ^{[1
]}

Shen, X. ^{[1
]}

You, S. J. ^{[1
]}

Yang, L. X. ^{[1
]}

Zhang, S. J. ^{[1
]}

Jiang, S. ^{[2
]}

Li, Y. C. ^{[2
]}

Liu, J. ^{[2
]}

Zhu, K. ^{[1
]}

Liu, Y. L. ^{[1
]}

Zhou, W. Y. ^{[1
]}

Chen, L. C. ^{[1
]}

Jin, C. Q. ^{[1
]}

Yu, R. C. ^{[1
]}

Xie, S. S. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China

来源：

JOURNAL OF MATERIALS RESEARCH | 2010年 / 25卷 / 12期

基金：

中国国家自然科学基金;

关键词：

LIGHT-EMITTING DEVICES; INDIUM NITRIDE; ELECTRON-TRANSPORT; LASER-DIODES; GROWTH; GAN;

D O I：

10.1557/JMR.2010.0290

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-pressure in situ angular dispersive x-ray diffraction study on the wurtzite-type InN nanowires has been carried out by means of the image-plate technique and diamond-anvil cell (DAC) up to about 31 8 GPa The pressure-induced structural transition from the wurtzite to a rocksalt-type phase occurs at about 14 6 GPa, which is slightly higher than the transition pressure of InN bulk materials (similar to 12 1 GPa) The relative volume reduction at the transition point is close to 17 88%, and the bulk modulus B-0 is determined through fitting the relative volume-pressure experimental data related to the wurtzite and rocksalt phases to the Birch-Murnaghan equation of states Moreover, high-pressure Raman scattering for InN nanowires were also investigated in DAC at room temperature The corresponding structural transition was confirmed by assignment of phonon modes We calculated the mode Gruneisen parameters for the wurtzite and rocksalt phases of InN nanowires

引用

页码：2330 / 2335

页数：6

共 27 条

[1] FIRST-ORDER RAMAN EFFECT IN WURTZITE-TYPE CRYSTALS [J].

ARGUELLO, CA ;

ROUSSEAU, DL ;

PORTO, SPS .

PHYSICAL REVIEW, 1969, 181 (03) :1351-&

[2] Indium nitride (InN): A review on growth, characterization, and properties [J].

Bhuiyan, AG ;

Hashimoto, A ;

Yamamoto, A .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :2779-2808

[3] ON THE THERMAL EXPANSION OF SOLIDS [J].

BLACKMAN, M .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (09) :827-832

[4] Electrically excited infrared emission from InN nanowire transistors [J].

Chen, Jia ;

Cheng, Guosheng ;

Stern, Eric ;

Reed, Mark A. ;

Avouris, Phaedon .

NANO LETTERS, 2007, 7 (08) :2276-2280

[5]

Daniels W.B., 1965, LATTICE DYNAMICS, P273, DOI 10.1016/B978-1-4831-9838-5.50045-5

[6] Experimental and theoretical studies of phonons in hexagonal InN [J].

Davydov, VY ;

Emtsev, VV ;

Goncharuk, IN ;

Smirnov, AN ;

Petrikov, VD ;

Mamutin, VV ;

Vekshin, VA ;

Ivanov, SV ;

Smirnov, MB ;

Inushima, T .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3297-3299

[7] Transient electron transport in wurtzite GaN, InN, and AlN [J].

Foutz, BE ;

O'Leary, SK ;

Shur, MS ;

Eastman, LF .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (11) :7727-7734

[8] BLUE-GREEN INJECTION-LASERS CONTAINING PSEUDOMORPHIC ZN1-XMGXSYSE1-Y CLADDING LAYERS AND OPERATING UP TO 394-K [J].

GAINES, JM ;

DRENTEN, RR ;

HABERERN, KW ;

MARSHALL, T ;

MENSZ, P ;

PETRUZZELLO, J .

APPLIED PHYSICS LETTERS, 1993, 62 (20) :2462-2464

[9] BLUE-GREEN LASER-DIODES [J].

HAASE, MA ;

QIU, J ;

DEPUYDT, JM ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1991, 59 (11) :1272-1274

[10] Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN [J].

Halsall, MP ;

Harmer, P ;

Parbrook, PJ ;

Henley, SJ .

PHYSICAL REVIEW B, 2004, 69 (23) :235207-1

← 1 2 3 →