Multiwavelength Raman Scattering Spectroscopy Study of Graphene Synthesized on Si(100) and SiO2 by Microwave Plasma-Enhanced Chemical Vapor Deposition

被引：9
作者：
Meskinis, Sarunas [1 ]
Gudaitis, Rimantas [1 ]
Vasiliauskas, Andrius [1 ]
Tamulevicius, Sigitas [1 ]
Niaura, Gediminas [2 ]
机构：
[1] Kaunas Univ Technol, Inst Mat Sci, K Barsausko St 59, LT-51423 Kaunas, Lithuania
[2] Ctr Phys Sci & Technol, Dept Organ Chem, Sauletekio Ave 3, LT-10257 Vilnius, Lithuania
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2020年 / 14卷 / 02期
关键词：
direct graphene synthesis; microwave plasma-enhanced chemical vapor deposition; multiwavelength Raman scattering spectroscopy; structure;
D O I：
10.1002/pssr.201900462
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Herein, multiwavelength Raman spectroscopy studies of graphene samples synthesized directly on SiO2 and Si(100) substrates by microwave plasma-enhanced chemical vapor deposition (MW PECVD), using five different excitation wavelengths in ultraviolet (UV), visible light, and near-infrared (NIR) ranges, are presented paying attention to the peculiarities of the spectra. Raman spectra parameters are analyzed to reveal effects of the excitation wavelength. Structural features of graphene directly synthesized on SiO2 and Si(100) are discussed. Analysis of the interdependences of various Raman spectra parameters reveals that the most informative spectra are recorded using 532 nm wavelength excitation. Examination of the full width at half maximum values of G band (FWHM(G)) reveals that the graphene layers synthesized on Si(100) substrate consist of smaller crystallites comparing with SiO2 substrate.
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页数：5
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