Adsorption-enhanced spin-orbit coupling of buckled honeycomb silicon

被引：0

作者：

Sun, Jia-Tao ^{[1
,2
]}

Chen, Wei ^{[3
,4
]}

Sakamoto, Kazuyuki ^{[5
]}

Feng, Yuan Ping ^{[4
]}

Wee, Andrew T. S. ^{[4
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore

[4] Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore

[5] Chiba Univ, Dept Nanomat Sci, Chiba 2638522, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2016年 / 83卷

基金：

中国国家自然科学基金;

关键词：

Silicene; Spintronics; Spin orbit coupling; Density functional theory; ROOM-TEMPERATURE; GRAPHENE;

D O I：

10.1016/j.physe.2016.04.022

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the electronic structures of quasi-two-dimensional buckled honeycomb silicon (BHS) saturated by atomic hydrogen and fluorine by means of first-principles calculations. The graphene-like hexagonal silicon with chair configurations can be stabilized by atomic hydrogen and fluorine adsorption. Together with a magnetic ground state, large spin orbit coupling (SOC) of BHS saturated by hydrogen on either side (Semi-H-BHS) indicated by the band splitting of sigma bond at Gamma point in the Brillouin zone is attributed to the intermixing between the density of states of hydrogen atoms and pi bonds of unpassivated Si-2 around the Fermi level. The Zeeman spin splitting is most likely caused by the internal electric field induced by asymmetric charge transfer. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：141 / 145

页数：5

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