Sub-micron fine structure of GaN by metalorganic vapor phase epitaxy (MOVPE) selective area growth (SAG) and buried structure by epitaxial lateral overgrowth (ELO)

Sub-micron GaN dot structure has been realized by selective area growth (SAG) using metalorganic vapor phase epitaxy (MOVPE). A truncated hexagonal sub-micron dot having a (0 0 0 1) plane and {1 (1) over bar 0 1} facet was obtained by SAG on SiO2 dot pattern fabricated by laser holography. Morphology of the GaN lines depends on the crystal axis of the sob-micron line patterns. The lateral growth rate to the line pattern along the [1 (1) over bar 0 0] direction is much faster than that along the [1 1 (2) over bar 0] direction. The GaN line structures coalesce easily on the sub-micron line patterns along the [1 (1) over bar 0 0] axis, resulting in buried structures of the SiO2 mask. (C) 1998 Elsevier Science B.V. All rights reserved.