Vector two-tone measurements for validation of non-linear microwave FinFET model

被引：8

作者：

Crupi, Giovanni ^{[1
]}

Avolio, Gustavo ^{[2
]}

Schreurs, Dominique M. M. -P. ^{[2
]}

Pailloncy, Guillaume ^{[3
]}

Caddemi, Alina ^{[1
]}

Nauwelaers, Bart ^{[2
]}

机构：

[1] Univ Messina, Dipartimento Fis Mat & Ingn Elettron, I-98166 Messina, Italy

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

[3] NMDG NV, B-2880 Bornem, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 10期

关键词：

Equivalent circuit model; FinFET; Intermodulation distortion; Two-tone measurements; MOSFETS; IMD;

D O I：

10.1016/j.mee.2009.12.075

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The goal of this paper is to demonstrate the added value of vector two-tone measurements in validating a microwave transistor model. By having the phase information of the low frequency intermodulation products, the model can be evaluated completely both in frequency and time domain. The approach is illustrated on a non-dispersive FinFET. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2008 / 2013

页数：6

共 18 条

[1] Avolio G, 2009, 2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, P930
[2] AVOLIO G, 2008, WORKSH INT NONL MICR, P97
[3] Multi-gate SOI MOSFETs
Colinge, J. P.
[J]. MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 2071 - 2076
[4] Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects
Crupi, Giovanni
Schreurs, Dominique M. M. -P.
Caddemi, Alina
Angelov, Iltcho
Homayouni, Majid
Raffo, Antonio
Vannini, Giorgio
Parvais, Bertrand
[J]. MICROELECTRONIC ENGINEERING, 2009, 86 (11) : 2283 - 2289
[5] Large- and small-signal IMD behavior of microwave power amplifiers
de Carvalho, NB
Pedro, JC
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (12) : 2364 - 2374
[6] de Carvalho NB, 2001, IEEE MTT S INT MICR, P455, DOI 10.1109/MWSYM.2001.966929
[7] Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model
Fager, C
Pedro, JC
de Carvalho, NB
Zirath, H
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (12) : 2834 - 2842
[8] Follmann R, 2005, 35th European Microwave Conference, Vols 1-3, Conference Proceedings, P1149
[9] A folded-channel MOSFET for deep-sub-tenth micron era
Hisamoto, D
Lee, WC
Kedzierski, J
Anderson, E
Takeuchi, H
Asano, K
King, TJ
Bokor, J
Hu, CM
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 1032 - 1034
[10] MCGOVERN P, 2004, IEEE INT MICR S FORT, P825

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