Quantum-dot optical temperature probes

被引:361
|
作者
Walker, GW [1 ]
Sundar, VC [1 ]
Rudzinski, CM [1 ]
Wun, AW [1 ]
Bawendi, MG [1 ]
Nocera, DG [1 ]
机构
[1] MIT, Dept Chem, Cambridge, MA 02139 USA
关键词
D O I
10.1063/1.1620686
中图分类号
O59 [应用物理学];
学科分类号
摘要
The steady-state photoluminescence (PL) properties of cadmium selenide quantum dots (QDs) with a zinc sulfide overlayer [(CdSe)ZnS] can be strongly dependent on temperature in the range from 100 to 315 K. The PL intensity from 50 to 55 Angstrom (CdSe)ZnS QDs in poly(lauryl methacrylate) matrices increases by a factor of similar to5 when the temperature is decreased from 315 to 100 K, and the peak of the emission band is blueshifted by 20 nm over the same range. The change in PL intensity is appreciable, linear, and reversible (-1.3% per degreesC) for temperatures close to ambient conditions. These properties of (CdSe)ZnS dots are retained in a variety of matrices including polymer and sol-gel films, and they are independent of excitation wavelength above the band gap. The significant temperature dependence of the luminescence combined with its insensitivity to oxygen quenching establishes (CdSe)ZnS dots as optical temperature indicators for temperature-sensitive coatings. (C) 2003 American Institute of Physics.
引用
收藏
页码:3555 / 3557
页数:3
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