FDTD Simulation of Semiconductor Plasmonic Nano-Ring Laser at 1550nm Based on Realistic Semiconductor Gain Model

被引：0

作者：

Chen, Xi ^{[1
]}

Bhola, Bipin ^{[2
]}

Huang, Yingyan ^{[1
]}

Ho, Seng-Tiong ^{[1
,2
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA

[2] ASTAR, Data Storage Inst, Singapore 117608, Singapore

来源：

2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS) | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss the regime where nano-ring laser is feasible in which the absorption loss in metal is compensated by semiconductor gain. A nanometre-scale electrically pumped ring laser design is simulated using multi-level multi-electron FDTD model. (C) 2009 Optical Society of America

引用

页数：2

共 4 条

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