Valley surface-wave photonic crystal and its bulk/edge transport

被引:152
作者
Gao, Zhen [1 ]
Yang, Zhaoju [1 ]
Gao, Fei [1 ]
Xue, Haoran [1 ]
Yang, Yahui [1 ]
Dong, Jianwen [2 ,3 ]
Zhang, Baile [1 ,4 ]
机构
[1] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore
[2] Sun Yat Sen Univ, Sch Phys, Guangzhou 510275, Guangdong, Peoples R China
[3] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[4] Nanyang Technol Univ, Ctr Disrupt Photon Technol, Singapore 637371, Singapore
基金
中国国家自然科学基金;
关键词
SPIN; PLASMONS;
D O I
10.1103/PhysRevB.96.201402
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recent theories have proposed a concept of valley photonic crystals as an analog of gapped valleytronic materials such as MoS2 and bilayer graphene. Here, we further extend the applicability of valley photonic crystals to surface electromagnetic waves and experimentally demonstrate a valley surface-wave photonic crystal on a single metal surface as a photonic duplicate of MoS2. Both bulk transport and edge transport are directly mapped with a near-field microwave imaging system. The photonic valley pseudospins are demonstrated, together with the photonic valley Hall effect that splits the opposite photonic valley pseudospins into two opposite directions. The valley edge transport in MoS2 or other transition-metal dichalcogenide monolayers, which is different from bilayer graphene but still stays unrealized in condensed-matter systems, is demonstrated on this MoS2-like photonic platform. Our study not only offers a tabletop platform to study the valleytronic physics, but also opens a venue for on-chip integrated photonic device applications using valley-polarized information.
引用
收藏
页数:6
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